Datasheet > RM2303

RM2303

更新时间： 2024-06-27 12:14:00

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	210K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 2.0 A;Rds-on (typ) (mOhms) : 72 mOhms;Total Gate Charge (nQ) typ : 8.5 nQ;Maximum Power Dissipation (W) : 1.0 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 226 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM2303 数据手册

RM2303

P-Channel Enhancement Mode Power MOSFET

Description

The RM2303 uses advanced trench technology to provide

excellent R_DS(ON), This device is suitable for use as a load

switch or in PWM applications.

General Features

ƽ V_DS= -30V,I_D= -2.0A

R_DS(ON)< 130mꢀ @ V_GS=-10V

Schematic diagram

R_DS(ON)< 180mꢀ @ V_GS=-4.5V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin assignment

Application

ƽ PWM applications

ƽ Load switch

ƽ Power management

ƽ Halogen-free

ƽ P/N suffix V means AEC-Q101 qualified, e.g:RM2303V

SOT-23 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

2303

RM2303

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-2.0

I_D

I_DM

-10

Maximum Power Dissipation

1.0

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_ꢁJA

125

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=-250ꢂA

V_DS=-30V,V_GS=0V

-30

-33

-1

ꢂA

2019-02/15

REV:A

12 3 4 5 6 7

中文翻译

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与RM2303相关器件

型号	品牌	获取价格	描述	数据表
RM2304	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.6 A;Rds-on (typ) (mOhms) : 58 mOhms;Total Gate Charge (nQ
RM2304E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.8 A;Rds-on (typ) (mOhms) : 48 mOhms;Total Gate Charge (nQ
RM2305	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM2305B	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM2305C	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 30 mOhms;Total Gate Charge (nQ
RM2306E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 5.3 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ
RM2308	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 78 mOhms;Total Gate Charge (nQ
RM2309	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.1 A;Rds-on (typ) (mOhms) : 45 mOhms;Total Gate Charge (nQ
RM2309E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 30 mOhms;Vgs(th) (typ) : 1.8 V
RM230N85HD	RECTRON	获取价格	Vdss (V) : 85 V;Id @ 25C (A) : 238 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (n