Datasheet > RM2301E

RM2301E

更新时间： 2024-06-27 12:12:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	266K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 2.6 A;Rds-on (typ) (mOhms) : 87 mOhms;Total Gate Charge (nQ) typ : 3.2 nQ;Maximum Power Dissipation (W) : 1 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 325 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM2301E 数据手册

RM2301E

P-Channel Enhancement Mode Power MOSFET

Description

The RM2301E uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications .It is ESD protested.

Schematic diagram

General Features

ƽ V_DS= -20V,I_D=-2.6A

R_DS(ON)< 150mꢀ @ V_GS=-2.5V

R_DS(ON)< 120mꢀ @ V_GS=-4.5V

ESD Rating: 2000V HBM

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin assignment

Application

ƽ Load switch

Halogen-free

SOT-23 top view

Tape width

P/N suffix V means AEC-Q101 qualified, e.g:RM2301E V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

2301E

RM2301E

SOT-23

Ø180mmꢀ

8 mm

3000 unitsꢀ

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

-2.6

I_D

I_DM

-13

Maximum Power Dissipation

1.0

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_ꢁJA

125

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

_GS=0V I_D=-250ꢂA

-20

V_DS=-20V,V_GS=0V

-1

ꢂA

2019-04/15

REV:O

12 3 4 5 6 7

中文翻译

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与RM2301E相关器件

型号	品牌	获取价格	描述	数据表
RM2301S3	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 2.8 A;Rds-on (typ) (mOhms) : 90 mOhms;Total Gate Charge (nQ
RM2301S9	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 64 mOhms;Total Gate Charge (nQ
RM2302	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 37 mOhms;Total Gate Charge (nQ
RM2302C	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 2.1 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ
RM2303	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 2.0 A;Rds-on (typ) (mOhms) : 72 mOhms;Total Gate Charge (nQ
RM2304	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.6 A;Rds-on (typ) (mOhms) : 58 mOhms;Total Gate Charge (nQ
RM2304E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.8 A;Rds-on (typ) (mOhms) : 48 mOhms;Total Gate Charge (nQ
RM2305	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM2305B	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM2305C	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 30 mOhms;Total Gate Charge (nQ