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RM220N85T7 PDF预览

RM220N85T7

更新时间: 2024-10-15 18:09:51
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 342K
描述
Vdss (V) : 85 V;Id @ 25C (A) : 220 A;Rds-on (typ) (mOhms) : 2.4 mOhms;Total Gate Charge (nQ) typ : 124 nQ;Maximum Power Dissipation (W) : 250 W;Input Capacitance (Ciss) : 6234 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-263-7L

RM220N85T7 数据手册

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RM220N85T7  
N-Channel Enhancement Mode Power MOSFET  
Features  
ID  
220 A  
ʆ
BV  
Ptot  
85 V  
250 W  
ʇ
ʆ
Simplified Outline  
Symbol  
RDS(ON) ʆ 2.8 mΩ @ VGS = 10 V  
4.Drain  
Surface-mounted package  
Super Trench  
Tj max 175Ȼ  
Advanced trench cell design  
MSL1  
1.Gate  
4
1 2 3 5 6 7  
Applications  
2,3  
Top View  
TO-263-7L  
Source  
E-Tool appliances  
BMS appliances  
High power inverter system  
5,6,7  
Inverter appliances  
Halogen-free  
Package  
Quantity  
Marking  
220N85  
Product Name  
RM220N85T7  
800  
TO-263-7L  
Limiting Values  
Symbol  
Parameter  
Conditions  
Min Max Unit  
VDS  
VGS  
ID***  
ID***  
IDM*,***  
Ptot  
Drain-Source Voltage  
Gate-Source Voltage  
85  
-
-
V
V
TC = 25  
D
S
20  
TC = 25 ഒ  
Drain Current ( DC )  
-
220  
156  
800  
250  
175  
175  
220  
805  
32  
A
TC = 25 , VGS = 10 V  
Drain Current ( DC )  
-
A
TC = 100 , VGS = 10 V  
Drain Current ( Pulsed )  
Drain power dissipation  
Storage Temperature  
Junction Temperature  
Continuous-Source Current  
Single Pulsed Avalanche Energy  
-
G
A
TC = 25 , VGS = 10 V  
-
W
A
TC = 25 ഒ  
Tstg  
-55  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
TJ  
-
-
-
-
-
IS  
TC = 25 ഒ  
EAS  
VDD= 100V, L= 0.1 mH  
mJ  
R
θJA**  
θJC**  
Thermal Resistance- Junction to Ambient  
Thermal Resistance- Junction to Case  
/W  
/W  
R
0.45  
2022-09/113  
REV:O  
Notes:  
*
Pulse width 300s, duty cycle 2%  
** Surface Mounted on minimum footprint pad area  
*** Limited by bonding wire  

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