Datasheet > RM220N150TL

RM220N150TL

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1547K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 220 A;Rds-on (typ) (mOhms) : 4.1 mOhms;Total Gate Charge (nQ) typ : 158 nQ;Maximum Power Dissipation (W) : 375 W;Input Capacitance (Ciss) : 9320 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TOLL-8L

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RM220N150TL 数据手册

RM220N150TL

N-Channel Enhancement Mode MOSFET

Features

BV ≥150 V，

，

ID ≤220 A

PD≤375 W

RDS(ON) ≤ 4.6 mΩ @VGS = 10 V

RDS(ON) ≤ 5.5 mΩ @VGS = 6 V

Surface-mounted package

Super Trench

Symbol

Tj max 175℃

Advanced trench cell design

MSL1

Dꢀ

Applications

Power Tool appliances

BMS appliances

High power inverter system

Halogen-free

GS S S S SꢀS

Top Viewꢀ

TOLL-8Lꢀ

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM220N150TLL

TOLL-8L

2000

0415T

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Symbol

V_DS

Parameter

Drain-Source Voltage

Conditions

T_C=25℃

Min Max Unit

150

V_GS

Gate-Source Voltage

T_C=25℃

±2 5

220

154

680

375

220

T_C=25℃, V_GS=10 V

T_C=100℃, V_GS=10 V

T_C=25℃, V_GS=10 V

T_C=25℃

I_D*

Drain Current (DC)

I_DM

Drain Current (Pulsed)

P_D

I_S

Drain Power Dissipation

Continuous-Source Current

Single Pulsed Avalanche Energy

T_C=25℃

E_AS

V_DD=100V, L=1.0 mH

-55

1250 mJ

T_J, T_stg

R_θJA**

R_θJC**

Operating Junction and Storage Temperature Range

Thermal Resistance-Junction to Ambient

Thermal Resistance-Junction to Case

175

32.8

0.4

℃

℃/W

Notes:

Pulse width  300 μs, duty cycle  2%.

Surface mounted on 1 in²pad area, t  10 sec.

2023-11/113

REV:O

*** Limited by bonding wire.

12 3 4 5 6 7

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