Datasheet > RM21N650T7

RM21N650T7

更新时间： 2024-09-30 18:10:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	588K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 21 A;Rds-on (typ) (mOhms) : 180 mOhms;Total Gate Charge (nQ) typ : 45 nQ;Maximum Power Dissipation (W) : 200 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 1950 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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RM21N650T7 数据手册

RM21N650T7

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

650 V

V_DS@T_jmax

R_{DS(ON) MAX}

I_D

180

mΩ

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

RM21N650T7

TO-247

21N650

Table 1. Absolute Maximum Ratings (T_C=25ć)

Parameter

Drain-Source Voltage (VGS=0V˅

Gate-Source Voltage (VDS=0V)

Continuous Drain Current at Tc=25°C

Symbol

VDS

RM21N650T7

Unit

650

f30

VGS

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

13.2

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

200

1.6

690

Derate above 25°C

W/°C

Single pulse avalanche energy ^{(Note 2)}

EAS

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

E_AR

(Note 1)

2016-12

REV:O15

12 3 4 5 6 7

中文翻译

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