Datasheet > RM20N60LD

RM20N60LD

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	473K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ) typ : 47 nQ;Maximum Power Dissipation (W) : 45 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 500 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM20N60LD 数据手册

RM20N60LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM20N60LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=60V,I_D=20A

R_DS(ON)<35mΩ @ V_GS=10V

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

Marking and pin assignment

ƽ Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-252-2L

RM20N60LD

20N60

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

P_D

Maximum Power Dissipation

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.3

W/ć

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2023-06/15

REV:C

12 3 4 5 6 7

中文翻译

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与RM20N60LD相关器件

型号	品牌	获取价格	描述	数据表
RM20N60LDV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ)
RM20N650HD	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20N650T2	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20N650TI	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20P100LD	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 165 mOhms;Total Gate Charge (n
RM20P30D3	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Total Gate Charge (n
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RM20TA-2H	MITSUBISHI	获取价格	HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
RM20TN-H	MITSUBISHI	获取价格	Three-Phase Diode Bridge
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