Datasheet > RM20N60HDV

RM20N60HDV

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1882K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 25 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ) typ : 49 nQ;Maximum Power Dissipation (W) : 50 W;Input Capacitance (Ciss) : 1890 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-263(D2-PAK);Certified (AEC-Q101...etc) : AEC-Q101

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中文翻译

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数据手册

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RM20N60HDV 数据手册

RM20N60HDV

N-Channel Enhancement Mosfet

Features

⚫ 60V,25A

R_DS

_）<35mΩ＠V_GS=10V TYP:26mΩ

（

⚫ Advanced Trench Technology

⚫ High density cell design for ultra low RDS(ON)

⚫ Fully characterized avalanche voltage and current

⚫ Tjmax=175℃

Applications

⚫ Power switching application

⚫ Hard switched and high frequency circuits

⚫ Uninterrupted Power Supply (UPS)

⚫ P/N suffix V means AEC-Q101 qualified, e.g:RM20N60HDV

⚫ Halogen-free

TO-263

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

20N60

RM20N60HDV

TO-263

800

ABSOLUTE MAXIMUM RATINGS (T_J=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C100℃)

I_D

Pulsed Drain Current

I_DM

Single Pulsed Avalanche Energy ⁽⁵⁾

Drain Power Dissipation

E_AS

P_D

100

Thermal Resistance from Junction to Case

Thermal Resistance- Junction to Ambient

Junction Temperature

R_θJC

R_θJA

T_J

3.0

℃/W

℃

175

Storage Temperature

T_STG

-55~ +175

℃

2023-08/59

REV:O

12 3 4 5 6 7

中文翻译

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与RM20N60HDV相关器件

型号	品牌	获取价格	描述	数据表
RM20N60LD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ)
RM20N60LDV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ)
RM20N650HD	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20N650T2	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20N650TI	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20P100LD	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 165 mOhms;Total Gate Charge (n
RM20P30D3	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Total Gate Charge (n
RM20TA-24	MITSUBISHI	获取价格	HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
RM20TA-2H	MITSUBISHI	获取价格	HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
RM20TN-H	MITSUBISHI	获取价格	Three-Phase Diode Bridge