Datasheet > RM20N150LD

RM20N150LD

更新时间： 2024-06-27 12:14:02

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	264K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 59 mOhms;Total Gate Charge (nQ) typ : 12 nQ;Maximum Power Dissipation (W) : 68 W;Vgs(th) (typ) : 3.3 V;Input Capacitance (Ciss) : 600 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM20N150LD 数据手册

RM20N150LD

N-Channel Super Trench Power MOSFET

Description

The RM20N150LD uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

● V_DS=150V,I_D=20A

R_DS(ON)=59mΩ (typical) @ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

TO-252 -2Ltop view

Application

● LED backlighting

rectification

● Ideal for high-frequency switching and synchronous

●

Halogen-free

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

20N150

RM20N150LD

TO-252-2L

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V_DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V_GS

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.45

W/ć

E_AS

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 175

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

2.2

ć/W

2019-05/17

REV:O

12 3 4 5 6 7

中文翻译

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与RM20N150LD相关器件

型号	品牌	获取价格	描述	数据表
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RM20N60HDV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 25 A;Rds-on (typ) (mOhms) : 26 mOhms;Total Gate Charge (nQ)
RM20N60LD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ)
RM20N60LDV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ)
RM20N650HD	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20N650T2	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20N650TI	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 210 mOhms;Total Gate Charge (n
RM20P100LD	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 165 mOhms;Total Gate Charge (n
RM20P30D3	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 20 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Total Gate Charge (n