Datasheet > RM200N85T2

RM200N85T2

更新时间： 2024-10-31 18:06:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1917K
描述
Vdss (V) : 85 V;Id @ 25C (A) : 200 A;Rds-on (typ) (mOhms) : 2.55 mOhms;Total Gate Charge (nQ) typ : 124 nQ;Maximum Power Dissipation (W) : 245 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 7680 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM200N85T2 数据手册

RM200N85T2

RM200N85HD

N-Channel Power MOSFET

Description

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification.

Application

● DC/DC Converter

Schematic Diagram

rectification

●Ideal for high-frequency switching and synchronous

General Features

● V_DS85V,I_D200A

TO-220

TO-263

R_DS(ON)2.55mΩ , typical (TO-220)@ V_GS10V

R_DS(ON)2.4mΩ , typical (TO-263)@ V_GS10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

Halogen-free

●

100% UIS TESTED!

100% ΔVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

200N85

RM200N85T2

RM200N85HD

TO-220

200N85

TO-263

Absolute Maximum Ratings (T_C25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

200

150

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C100℃)

Pulsed Drain Current

800

Maximum Power Dissipation

Derating factor

245

P_D

1.63

1767

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

2024-03/15

REV:O

12 3 4 5 6 7

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