Datasheet > RM200N40DFV

RM200N40DFV

更新时间： 2024-06-27 12:12:25

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	396K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 200 A;Rds-on (typ) (mOhms) : 0.9 mOhms;Total Gate Charge (nQ) typ :

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中文翻译

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数据手册

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RM200N40DFV 数据手册

ꢀ

ꢀ ꢀ

RM200N40DFV

N-Channel Enhancement Mode Power MOSFET

Feature

ꢀ 40V,200A

R_DS

m¡˜V =10V (TYP:0.9m¡)

＜1.1

m¡˜V =4.5V (TYP:1.3m¡)

＜1.5

ꢀ Split Gate Trench Technology

ꢀ Lead free product is acquired

ꢀ Excellent R _DS

and Low Gate Charge

Application

ꢀ PWM applications

ꢀ Load Switch

ꢀ Power management

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM200N40DFV

PDFN5X6-8L

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

RM200N40DFV

PDFN5*6-8L

13 inch

5000

G011N04G

ABSOLUTE MAXIMUM RATINGS (T_a=25ć unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

f20

200

Continuous Drain Current (T_a=25ć)

Continuous Drain Current (T_a=100ć)

Pulsed Drain Currenr ⁽¹⁾

I_D

124

I_DM

560

Singel Pulsed Avalanche Energy ⁽²⁾

E_AS

P_D

441

Power Dissipation

67.5

Thermal Resistance from Junction to Case

Junction Temperature

R_θJC

T_J

1.85

ć/W

150

Storage Temperature

T_STG

-55~ +150

2022-10/59

REV:A

ꢀ

12 3 4 5 6 7 8

中文翻译

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