Datasheet > RM2003

RM2003

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
11页	431K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 36 mOhms;Total Gate Charge (nQ) typ :

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RM2003 数据手册

RM2003

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM2003 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

ƽ N-Channel

N-channel

P-channel

V_DS= 20V,I_D=3A

_DS(ON)< 35mꢀ @ V_GS=4.5V

R_DS(ON)< 55mꢀ @ V_GS=2.5V

ƽ P-Channel

V_DS= -20V,I_D= -3A

2003

R_DS(ON)< 75mꢀ @ V_GS=-4.5V

R_DS(ON)< 100mꢀ @ V_GS=-2.5V

ƽ High power and current handing capability

ƽ Lead free product is acquired

Marking and pin Assignment

ƽ Surface mount package

ƽ Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM2003V

SOT-23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2003

RM2003

SOT-23-6L

Ø180mm

8mm

3000

units

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

V_GS

T_A=25ć

T_A=70ć

2.4

-3

Continuous Drain Current

I_D

-2.4

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-13

T_A=25ć

0.8

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^(Note2)

R_ꢁJA

N-Ch

P-Ch

156

ć/W

Thermal Resistance,Junction-to-Ambient ^(Note2)

2019-02/15

REV:

12 3 4 5 6 7...11

中文翻译

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