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RM1ZV1 PDF预览

RM1ZV1

更新时间: 2024-11-25 15:49:47
品牌 Logo 应用领域
三垦 - SANKEN 二极管
页数 文件大小 规格书
3页 187K
描述
Rectifier Diode, 1 Element, 1A, Silicon

RM1ZV1 技术参数

生命周期:Not Recommended包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.07
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

RM1ZV1 数据手册

 浏览型号RM1ZV1的Datasheet PDF文件第2页浏览型号RM1ZV1的Datasheet PDF文件第3页 
SANKEN ELECTRIC CO., LTD.  
RM1Z  
Scope  
The present specifications shall apply to Sanken silicon diode, RM1Z.  
Outline  
Type  
Silicon Rectifier Diode (Mesa type)  
Structure  
Applications  
Resin Molded  
Flammability: UL94V-0 (Equivalent)  
Frequency Rectificationetc.  
Absolute maximum ratings  
No.  
1
Item  
Symbol Unit  
Rating  
250  
Conditions  
Transient Peak Reverse Voltage  
Peak Reverse Voltage  
VRSM  
VRM  
V
V
A
2
200  
Refer to derating curve  
in Section 6  
3
Average Forward Current  
IF(AV)  
1.0  
50Hz.  
4
5
6
Peak Surge Forward Current  
Junction Temperature  
Storage Temperature  
IFSM  
Tj  
A
50  
Half sinewave, one  
shot  
°C  
°C  
-40 to +150  
-40 to +150  
Tstg  
Electrical characteristics (Ta=25°C, unless otherwise specified)  
No.  
1
Item  
Symbol Unit  
Rating  
Conditions  
Forward Voltage Drop  
Reverse Leakage Current  
VF  
IR  
V
0.95 max.  
5 max.  
IF=1.0A  
VR=VRM  
2
µA  
Reverse Leakage Current Under  
High Temperature  
3
4
µA  
50 max.  
15 max.  
VR=VRM, Tj=100°C  
HIR  
Thermal Resistance  
Rth(j-l) °C/W  
Between Junction and Lead  
040115  
13  
61426-01  

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