Datasheet > RM1A4N150S6

RM1A4N150S6

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	519K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 1.4 A;Rds-on (typ) (mOhms) : 480 mOhms;Total Gate Charge (nQ) typ : 8.1 nQ;Maximum Power Dissipation (W) : 1.56 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 350 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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数据手册

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RM1A4N150S6 数据手册

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General Description

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These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

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Features

zꢀ 150V,1.4A, RDS(ON) =480mȍ@VGS = 10V

zꢀ Improved dv/dt capability

zꢀ Fast switching

zꢀ 100% EAS Guaranteed

zꢀ Green Device Available

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