Datasheet > RM1A2N20ES2

RM1A2N20ES2

更新时间： 2025-05-22 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	288K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 1.2 A;Rds-on (typ) (mOhms) : 120 mOhms;Total Gate Charge (nQ) typ : 1.6 nQ;Maximum Power Dissipation (W) : 0.42 W;Vgs(th) (typ) : 0.75 V;Input Capacitance (Ciss) : 60 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM1A2N20ES2 数据手册

RM1A2N20ES2

N-Channel Enhancement Mode Power MOSFET

General Features

V_DS= 20V,I_D= 1.2A

_{DS(ON) < 0.18Ω @ VGS}=4.5V

=4.5V

R_DS(ON)< 0.22Ω @ V_GS=2.5V

Lead free product is acquired

ESD protected up to 4.0KV (HBM)

Application

Logic-level shift

Interfacing switching

Load switching

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

-23

Reel Size

Tape width

Quantity

3000 units

34K

Ø180mm

8 mm

SOT

RM1A2N20ES2

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T_a=25ć)

Continuous Drain Current (T_a=70ć)

Pulsed Drain Current

1.2

I_D

1.0

I_DM

3.5

Power Dissipation

P_D

0.42

298

ć/W

Thermal Resistance from Junction to Ambient

Junction Temperature

R_θJA

T_J

150

Storage Temperature

T_STG

-55~ +150

2020-06/59

REV:O

12 3 4 5

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