Datasheet > RM170N30DF

RM170N30DF

更新时间： 2024-11-19 18:09:15

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	222K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 170 A;Rds-on (typ) (mOhms) : 1.35 mOhms;Total Gate Charge (nQ) typ : 98 nQ;Maximum Power Dissipation (W) : 75 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 6150 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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技术参数
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RM170N30DF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

RM170N30DF 数据手册

RM170N30DF

N-Channel Super Trench Power MOSFET

Description

The RM170N30DF uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

ƽ V_DS=30V,I_D=170A

Schematic Diagram

R_DS(ON)=1.35mΩ (typical) @ V_GS=10V

_DS(ON)=1.8mΩ (typical) @ V_GS=4.5V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 150 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

Top View

Bottom View

ƽ Ideal for high-frequency switching and synchronous

100% UIS TESTED!

100% ∆Vds TESTED!

rectification

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

170N30

RM170N30DF

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

VGS

170

1±0

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

680

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.6

W/ć

E_AS

890

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

±016-08

REV:O15

12 3 4 5 6

中文翻译

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