Datasheet > RM16P60LD

RM16P60LD

更新时间： 2024-11-19 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	231K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 16.0 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ) typ : 22.4 nQ;Maximum Power Dissipation (W) : 25 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 1250 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM16P60LD 数据手册

RM16P60LD

60V P-Channel MOSFETs

General Description

BVDSS

-60V

RDSON

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

-16A

48mꢀ

Features

ꢀ -60V, -16A, RDS(ON) =48mꢀꢁꢂꢃꢄꢅꢆꢅ-10V

ꢀ Improved dv/dt capability

ꢀ Fast switching

ꢀ 100% EAS Guaranteed

ꢀ Green Device Available

TO252 Pin Configuration

Applications

ꢀ Motor Drive

ꢀ Power Tools

ꢀ LED Lighting

ꢀ P/N suffix V means AEC-Q101qualified, e.g:RM16P60LDV

ꢀ

ꢀ P/N suffix V meansHalogen-free

Absolute Maximum Ratings ^{Tc=25䉝 unless otherwise noted}

Symbol

Parameter

Rating

-60

Units

V_DS

V_GS

Drain-Source Voltage

f20

-16

Gate-SouUce Voltage

Drain Current – Continuous (T_C=25đ)

Drain Current – Continuous (T_C=100đ)

Drain Current – Pulsed¹

I_D

-10

I_DM

-64

Single Pulse Avalanche Energy²

Single Pulse Avalanche Current²

Power Dissipation (T_C=25đ)

ꢀ

EAS

IAS

ꢀ

-32

P_D

0.2

Power Dissipation – Derate above 25đ

Storage Temperature Range

W/đ

T_STG

T_J

-50 to 150

Operating Junction Temperature Range

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

đ/W

R_ꢀJA

R_ꢀJC

Thermal Resistance Junction to ambient

Thermal Resistance Junction to Case

---

2018-10/57

REV:A

12 3 4 5 6 7

中文翻译

下载PDF

与RM16P60LD相关器件

型号	品牌	获取价格	描述	数据表
RM170N30DF	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 170 A;Rds-on (typ) (mOhms) : 1.35 mOhms;Total Gate Charge (
RM-178BK	ETC	获取价格	RACK CASE
RM-178PCB	ETC	获取价格	RACK CASE
RM17N800HD	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 17 A;Rds-on (typ) (mOhms) : 265 mOhms;Total Gate Charge (n
RM17N800T2	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 17 A;Rds-on (typ) (mOhms) : 265 mOhms;Total Gate Charge (n
RM17N800TI	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 17 A;Rds-on (typ) (mOhms) : 265 mOhms;Total Gate Charge (n
RM17TE00	SCHNEIDER	获取价格	Multi-Delay Relay, SPDT, Momentary, 18700mW (Coil), 5A (Contact), 250VDC (Contact), 0.1s A
RM17UB310	SCHNEIDER	获取价格	Special Relay,
RM17W2P-1001	WINCHESTER	获取价格	D Subminiature Connector
RM17W2P-1008	WINCHESTER	获取价格	D Subminiature Connector