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RM160N40DF PDF预览

RM160N40DF

更新时间: 2024-11-21 18:09:23
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
9页 3913K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 160 A;Rds-on (typ) (mOhms) : 1.1 mOhms;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 65 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 3876 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

RM160N40DF 数据手册

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RM160N40DF  
N-Channel Enhancement Mosfet  
Feature  
40V,160A  
RDS ON<1.3mΩ@VGS=10V (TYP:1.1mΩ)  
RDS ON<1.8mΩ@VGS=4.5V (TYP:1.6mΩ)  
Split Gate Trench Technology  
Lead free product is acquired  
Excellent R DS  
and Low Gate Charge  
ON  
Application  
PWM applications  
Load Switch  
Power management  
Halogen-free  
DFN5X6-8L  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity (PCS)  
160N40  
RM160N40DF  
DFN5*6-8L  
13 inch  
-
5000  
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Value  
40  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
160  
V
Continuous Drain Current (Ta =25)  
Continuous Drain Current (Ta =100)  
Pulsed Drain Currenr (1)  
A
ID  
100  
A
IDM  
480  
A
Singel Pulsed Avalanche Energy (2)  
Power Dissipation  
EAS  
PD  
473  
mJ  
W
65  
Thermal Resistance from Junction to Case  
Junction Temperature  
RθJC  
TJ  
1.9  
/W  
150  
Storage Temperature  
TSTG  
-55~ +150  
2023-11/59  
REV:O  

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