Datasheet > RM15P60LD

RM15P60LD

更新时间： 2024-11-18 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	266K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 13 A;Total Gate Charge (nQ) typ : 11.8 nQ;Maximum Power Dissipation (W) : 31.2 W;Input Capacitance (Ciss) : 1080 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM15P60LD 数据手册

RM15P60LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM15P60LD uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge .This device is well suited for high current load

applications.

General Features

V_DS=-60V,I_D=-13A

Schematic diagram

R_DS(ON)<90mΩ @ V_GS=-10V

R_DS(ON)<115mΩ @ V_GS=-4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Application

Power switching application

Hard switched and high frequency circuits

Marking and pin assignment

Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

D6113

RM15P60LD

TO-252-2L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

VDS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-13

-8.3

-26

I_D

I_D(100 )

I_DM

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

P_D

E_AS

31.2

29.8

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2018-11/83

REV:O

12 3 4 5 6 7...9

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