Datasheet > RM15P55LD

RM15P55LD

更新时间： 2024-10-02 18:09:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	272K
描述
Vdss (V) : 55 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 75 mOhms;Total Gate Charge (nQ) typ : 26 nQ;Maximum Power Dissipation (W) : 35 W;Vgs(th) (typ) : 2.6 V;Input Capacitance (Ciss) : 1450 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM15P55LD 数据手册

RM15P55LD

P-Channel Enhancement Mode Power MOSFET

Description

The RM15P55LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=-55V,I_D=-15A

R_DS(ON)<75mΩ @ V_GS=-10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Excellent package for good heat dissipation

Application

Marking and pin assignment

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ DC-DC Converter

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252-2L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

15P55

RM15P55LD

TO-252-2L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

-55

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

-15

-10

-50

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance ,Junction-to-Case^{(Note 2)}

R_θJC

4.3

ć/W

2016-09

REV:O15

12 3 4 5 6 7

中文翻译

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