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RM15P30S8 PDF预览

RM15P30S8

更新时间: 2024-11-22 18:09:15
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 187K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 12 mOhms;Total Gate Charge (nQ) typ : 48 nQ;Maximum Power Dissipation (W) : 3.1 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 2900 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM15P30S8 数据手册

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RM15P30S8  
P-Channel Enhancement Mode Power MOSFET  
Description  
The RM15P30S8 uses advanced trench technology to provide  
excellent RDS(ON), This device is suitable for use as a load  
switch or in PWM applications.  
Schematic diagram  
General Features  
ƽ VDS = -30V,ID = -15A  
RDS(ON) < 12mΩ @ VGS=-10V  
ƽ High power and current handing capability  
ƽ Lead free product is acquired  
ƽ Surface mount package  
Marking and pin assignment  
Application  
ƽ PWM applications  
ƽ Load switch  
ƽ Uninterruptible power supply  
SOP-8 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
2500 units  
15P30  
RM15P30S8  
SOP-8  
Ø330mm  
12mm  
Absolute Maximum Ratings (TA=25ćunless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
20  
V
VGS  
ID  
-15  
A
Drain Current-Pulsed (Note 1)  
-80  
A
IDM  
Maximum Power Dissipation  
3.1  
W
ć
PD  
TJ,TSTG  
Operating Junction and Storage Temperature Range  
-55 To 150  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient(Note 2)  
RθJA  
40  
ć/W  
Electrical Characteristics (TA=25ćunless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
BVDSS  
VGS=0V ID=-250μA  
-30  
-33  
-
V
2016-09  
REV:O15  

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