Datasheet > RM15N650T2

RM15N650T2

更新时间： 2024-11-22 01:15:19

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
10页	1058K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

获取价格

数据手册

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RM15N650T2 数据手册

RM15N650HD

RM15N650T2

RM15N650TI

N-Channel Super Junction Power MOSFETꢀĊ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS@T_jmax

R_{DS(ON) MAX}

I_D

650

260

mΩ

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

15N650

RM15N650HD

RM15N650T2

RM15N650TI

TO-263

TO-220

TO-220F

TO-263

TO-220

TO-220F

Unit

Table 1. Absolute Maximum Ratings (T_C=25ć)

RM15N650HD

RM15N650T2

Parameter

Symbol

RM15N650TI

650

Drain-Source Voltage (VGS=0V˅

Gate-Source Voltage (VDS=0V)

V^DS

VGS

f30

Continuous Drain Current at Tc=25°C

15*

10*

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

(Note 1)

45*

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

145

1.16

33.5

0.268

Derate above 25°C

W/°C

Single pulse avalanche energy ^{(Note 2)}

Avalanche current^{(Note 1)}

370

7.5

EAS

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

(Note 1)

0.8

E_AR

2017-02

REV:O15

12 3 4 5 6 7...10

中文翻译

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与RM15N650T2相关器件

型号	品牌	获取价格	描述	数据表
RM15N650TI	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM15N700HD	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 260 mOhms;Total Gate Charge (n
RM15N700T2	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 260 mOhms;Total Gate Charge (n
RM15N700TI	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 260 mOhms;Total Gate Charge (n
RM15N800HD	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 260 mOhms;Maximum Power Dissip
RM15N800T2	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 260 mOhms;Maximum Power Dissip
RM15N800TI	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 260 mOhms;Maximum Power Dissip
RM15P30S8	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 12 mOhms;Total Gate Charge (nQ)
RM15P40D3V	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 27 mOhms;Total Gate Charge (nQ)
RM15P55LD	RECTRON	获取价格	Vdss (V) : 55 V;Id @ 25C (A) : 15 A;Rds-on (typ) (mOhms) : 75 mOhms;Total Gate Charge (nQ)