Datasheet > RM150N80DF

RM150N80DF

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	214K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (nQ) typ : 101 nQ;Maximum Power Dissipation (W) : 156 W;Input Capacitance (Ciss) : 5591 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6

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RM150N80DF 数据手册

ꢀ

ꢀ ꢀ

RM150N80DF

N-Channel Enhancement Mode Power MOSFET

ꢁ

Features

ꢀ 80V,150A

R_DS

_˅ꢀ3.0m¡˜V_GS=10V TYP:2.5m¡

_˅ꢀ4.0m¡˜V_GS=6V TYP:3.5m¡

ꢀ Surface-mounted package

ꢀ Split Gate Trench Technology

Applications

Power appliances

BMS appliances

High power inverter system

Halogen-free

ꢀ

ꢀ ꢀ

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DFN5X6

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

150N80

RM150N80DF

DFN5X6

5000

ABSOLUTE MAXIMUM RATINGS (T_a=25ć unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

f20

150

Continuous Drain Current (T_a=25ć) ^(2,3)

Pulsed Drain Current ^(1,2,3)

I_DM

240

Single Pulsed Avalanche Energy (V_DD=50V,L=0.1mH) ⁽²⁾

E_AS

P_D

420

Drain Power Dissipation

156

ꢁ

Thermal Resistance from Junction to Case⁽²⁾

Thermal Resistance- Junction to Ambient⁽²⁾

Junction Temperature

R_θJC

R_θJA

T_J

0.8

ć/W

62.5

150

Storage Temperature

T_STG

-55~ +150

2023-03/59

REV:O

Notes:

1. Pulse width ꢀ 300 ꢁs, duty cycle ꢀ 2 %

2. Surface Mounted on n 1 in2 pad area, t ꢀ 10 sec.

3. Limited by bonding wire

ꢀ

12 3 4 5 6 7

中文翻译

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