Datasheet > RM150N60T2

RM150N60T2

更新时间： 2024-06-27 12:13:11

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	222K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.4 mOhms;Total Gate Charge (nQ) typ : 163 nQ;Maximum Power Dissipation (W) : 220 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 6500 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM150N60T2 数据手册

RM150N60T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM150N60T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=60V,I_D=150A

R_DS(ON)<4.5mΩ @ V_GS=10V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

Marking and pin assignment

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

-ꢀ

150N60

RM150N60T2

TO-220-3L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

150

105

600

220

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

Maximum Power Dissipation

P_D

2016-12

REV:O15

12 3 4 5 6 7

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