Datasheet > RM150N40DFV

RM150N40DFV

更新时间： 2024-11-25 18:09:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	2286K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (nQ) typ :

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RM150N40DFV 数据手册

RM150N40DFV

N-Channel Super Trench Power MOSFET

Description

The RM150N40DFV uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

ƽ V_DS=40V,I_D=150A

Schematic Diagram

R_DS(ON)=1.6m (typical) @ V_GS=10V

R_DS(ON)=±.±m

(typical) @ V_GS=4.5V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Top View

Bottom View

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous rectification

Halogen-free

100% UIS TESTED!

100% ꢀVds TESTED!

P/N suffix V means AEC-Q101 qualified, e.g:RM150N40DFV

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

FN40

DFN5X6-8L

RM150N40DFV

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±±0

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current (Package Limited)

Maximum Power Dissipation

150

106

I_D

I_D(100ć)

400

I_DM

P_D

107

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.7

W/ć

E_AS

7±0

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2023-11/15

REV:D

12 3 4 5 6 7

中文翻译

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