Datasheet > RM150N30LT2

RM150N30LT2

更新时间： 2024-09-14 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	276K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.0 mOhms;Total Gate Charge (nQ) typ : 45 nQ;Maximum Power Dissipation (W) : 150 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 3400 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM150N30LT2 数据手册

RM150N30LT2

N-Channel Enhancement Mode Power MOSFET

Description

The RM150N30LT2 uses advanced trench technology and

DS(ON)

design to provide excellent R

with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=30V,I_D=150A

R_DS(ON)<3.5 mΩ @ V_GS=10V

Schematic diagram

R_DS(ON)<6.0mΩ @ V_GS=4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

TO-220-3L top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

150N30

RM150N30LT2

TO-220-3L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

150

100

400

150

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

I_DM

Maximum Power Dissipation

P_D

Derating factor

0.91

Single pulse avalanche energy ^{(Note 5)}

E_AS

350

Operating Junction and Storage Temperature Range

-55 To 175

1.05

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

2020-09/94

REV:C

12 3 4 5 6 7 8

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与RM150N30LT2相关器件

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RM150N40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N40DFV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N60DF	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.7 mOhms;Total Gate Charge (n
RM150N60DFV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.9 mOhms;Total Gate Charge (n
RM150N60HD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.6 mOhms;Total Gate Charge (n
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