Datasheet > RM150N30ALD

RM150N30ALD

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	622K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.6 mOhms;Total Gate Charge (nQ) typ : 45 nQ;Maximum Power Dissipation (W) : 150 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 3400 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM150N30ALD 数据手册

RM150N30ALD

N-Channel Enhancement Mode Power MOSFET

Description

The RM150N30ALD uses advanced trench technology and

DS(ON)

design to provide excellent R

with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=30V,I_D=150A

Schematic diagram

R_DS(ON)<3.2 mΩ @ V_GS=10V

R_DS(ON)<5.0mΩ @ V_GS=4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Special process technology for high ESD capability

Marking and pin assignment

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252 -2Ltop view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

150N30

RM150N30ALD

TO-252-2L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

150

100

400

150

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

I_DM

Maximum Power Dissipation

P_D

Derating factor

0.91

Single pulse avalanche energy ^{(Note 5)}

E_AS

350

Operating Junction and Storage Temperature Range

-55 To 175

1.05

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

2020-09/94

REV:O

12 3 4 5 6 7 8

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与RM150N30ALD相关器件

型号	品牌	获取价格	描述	数据表
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RM150N40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N40DFV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N60DF	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.7 mOhms;Total Gate Charge (n
RM150N60DFV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.9 mOhms;Total Gate Charge (n
RM150N60HD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.6 mOhms;Total Gate Charge (n
RM150N60T2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.4 mOhms;Total Gate Charge (n
RM150N80DF	RECTRON	获取价格	Vdss (V) : 80 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (n
RM150UZ-24	MITSUBISHI	获取价格	HIGH POWER GENERAL USE INSULATED TYPE
RM150UZ-2H	MITSUBISHI	获取价格	HIGH POWER GENERAL USE INSULATED TYPE