Datasheet > RM150N150HD

RM150N150HD

更新时间： 2024-11-21 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	357K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 7.2 mOhms;Total Gate Charge (nQ) typ : 74 nQ;Maximum Power Dissipation (W) : 320 W;Vgs(th) (typ) : 3.3 V;Input Capacitance (Ciss) : 5500 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-263(D2-PAK)

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RM150N150HD 数据手册

RM150N150HD

N-Channel Super Trench Power MOSFET

Description

The RM150N150HD uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency

switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=150V,I_D=150A

R_DS(ON)<7.2mꢀ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

TO-263-2L top view

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ꢀVds TESTED!

P/N suffix V means AEC-Q101 qualified, e.g:RM150N150HDV

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

150N150

RM150N150HD

TO-263-2L

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

150

100

560

320

2.1

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy ^{(Note 5)}

E_AS

1296

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_ꢁJC

0.47

ć/W

2018-07/15

REV:O

12 3 4 5 6 7...9

中文翻译

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与RM150N150HD相关器件

型号	品牌	获取价格	描述	数据表
RM150N30ALD	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.6 mOhms;Total Gate Charge (n
RM150N30LT2	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.0 mOhms;Total Gate Charge (n
RM150N40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N40DFV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N60DF	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.7 mOhms;Total Gate Charge (n
RM150N60DFV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.9 mOhms;Total Gate Charge (n
RM150N60HD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.6 mOhms;Total Gate Charge (n
RM150N60T2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.4 mOhms;Total Gate Charge (n
RM150N80DF	RECTRON	获取价格	Vdss (V) : 80 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.5 mOhms;Total Gate Charge (n
RM150UZ-24	MITSUBISHI	获取价格	HIGH POWER GENERAL USE INSULATED TYPE

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