Datasheet > RM150N100HD

RM150N100HD

更新时间： 2024-06-27 12:11:46

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	260K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.5 mOhms;Total Gate Charge (nQ) typ : 110 nQ;Maximum Power Dissipation (W) : 275 W;Vgs(th) (typ) : 3 V;Input Capacitance (Ciss) : 6680 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-263(D2-PAK)

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RM150N100HD 数据手册

RM150N100HD

N-Channel Super Trench Power MOSFET

Description

The RM150N100HD uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

V_DS=100V,I_D=150A

R_DS(ON)<4.2mΩ @ V_GS=10V

Excellent gate charge x R_DS(on)product

Very low on-resistance R_DS(on)

175 °C operating temperature

Pb-free lead plating

TO-263-2L top view

100% UIS tested

100% UIS TESTED!

100% ∆Vds TESTED!

Application

DC/DC Converter

Ideal for high-frequency switching and synchronous

rectification

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM150N100HD

TO-263-2L

150N100

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

20/-12

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous (Package Limited)

180

I_D

150

108

500

275

1.6

I_D

I_D(100

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_DM

P_D

Maximum Power Dissipation

Derating factor

Single pulse avalanche energy^{(Note 5)}

E_AS

378

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2018-11/15

REV:A

12 3 4 5 6 7...9

中文翻译

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与RM150N100HD相关器件

型号	品牌	获取价格	描述	数据表
RM150N100T2	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.5 mOhms;Total Gate Charge (
RM150N150HD	RECTRON	获取价格	Vdss (V) : 150 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 7.2 mOhms;Total Gate Charge (
RM150N30ALD	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.6 mOhms;Total Gate Charge (n
RM150N30LT2	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.0 mOhms;Total Gate Charge (n
RM150N40DF	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N40DFV	RECTRON	获取价格	Vdss (V) : 40 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.6 mOhms;Total Gate Charge (n
RM150N60DF	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 2.7 mOhms;Total Gate Charge (n
RM150N60DFV	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 1.9 mOhms;Total Gate Charge (n
RM150N60HD	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.6 mOhms;Total Gate Charge (n
RM150N60T2	RECTRON	获取价格	Vdss (V) : 60 V;Id @ 25C (A) : 150 A;Rds-on (typ) (mOhms) : 3.4 mOhms;Total Gate Charge (n