Datasheet > RM150N100ADF

RM150N100ADF

更新时间： 2024-11-25 18:09:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	416K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 128 A;Rds-on (typ) (mOhms) : 3.1 mOhms;Total Gate Charge (nQ) typ : 100 nQ;Maximum Power Dissipation (W) : 125 W;Vgs(th) (typ) : 2.0 V;Input Capacitance (Ciss) : 5980 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : DFN5X6-8L

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RM150N100ADF 数据手册

RM150N100ADF

N-Channel Super Trench Power MOSFET

Description

The RM150N100ADF uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=100V,I_D=150A

R_DS(ON)<4.2mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ Pb-free lead plating

Marking and pin assignment

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and

synchronous

Halogen-free

rectification

100% UIS TESTED!

100% ꢀVds TESTED!

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

DFN5X6-8L

RM150N100ADF

FN100A

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous (Package Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

128

I_D

I_D(100ć)

400

125

0.7

I_DM

P_D

Maximum Power Dissipation

Derating factor

Single pulse avalanche energy^{(Note 5)}

W/ć

E_AS

324

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2023-08/69

REV:A

12 3 4 5 6 7

中文翻译

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