Datasheet > RM140N150T2

RM140N150T2

更新时间： 2024-09-14 18:09:15

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	252K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 140 A;Rds-on (typ) (mOhms) : 5.6 mOhms;Total Gate Charge (nQ) typ : 80 nQ;Maximum Power Dissipation (W) : 320 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 5900 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-220

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RM140N150T2 数据手册

RM140N150T2

Power MOSFET

N-Channel Super Trench

Description

The RM140N150T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

Schematic diagram

R_DS(ON)and Q_g. This device is ideal for high-frequency

switching and synchronous rectification.

General Features

ƽ V_DS=150V,I_D=140A

R_DS(ON)<6.2mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Marking and pin assignment

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

ƽ Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

140N150

RM140N150T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

VDS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

140

100

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

440

Maximum Power Dissipation

320

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

2.1

W/ć

E_AS

1296

-55 To 175

Operating Junction and Storage Temperature Range

T_J,T_STG

2018-10/15

REV:O

12 3 4 5 6 7...9

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