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RM13P40S8 PDF预览

RM13P40S8

更新时间: 2024-06-27 12:12:16
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 241K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 13 A;Rds-on (typ) (mOhms) : 15 mOhms;Total Gate Charge (nQ) typ : 40 nQ;Maximum Power Dissipation (W) : 2.5 W;Vgs(th) (typ) : 2 V;Input Capacitance (Ciss) : 2800 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM13P40S8 数据手册

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RM13P40S8  
P-ChannelEnhancement Mode Power MOSFET  
Description  
The RM13P40S8 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
Schematic diagram  
General Features  
ƽ VDS =-40V,ID =-13A  
RDS(ON) <15mΩ @ VGS=-10V  
RDS(ON) <18mΩ @ VGS=-4.5V  
ƽ High density cell design for ultra low Rdson  
ƽ Fully characterized avalanche voltage and current  
ƽ Excellent package for good heat dissipation  
Marking and pin assignment  
Application  
ƽꢀ Power switching application  
ƽꢀ Hard switched and high frequency circuits  
ƽꢀ DC-DC converter  
SOP-8 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
2500 units  
RM13P40S8  
13P40  
SOP-8  
Ø330mm  
12mm  
Absolute Maximum Ratings (TA=25ćunless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-40  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
20  
V
VGS  
-13  
A
ID  
Drain Current-Continuous(TC=100ć)  
Pulsed Drain Current  
ID (100ć)  
-9  
50  
A
A
IDM  
Maximum Power Dissipation  
2.5  
W
ć
PD  
TJ,TSTG  
Operating Junction and Storage Temperature Range  
-55 To 150  
Thermal Characteristic  
Thermal Resistance ,Junction-to-Ambient(Note 2)  
RθJA  
50  
ć/W  
2016-09  
REV:O15  

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