Datasheet > RM13P200LD

RM13P200LD

更新时间： 2024-06-27 12:14:15

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
6页	887K
描述
Vdss (V) : 200 V;Id @ 25C (A) : 13 A;Rds-on (typ) (mOhms) : 340 mOhms;Maximum Power Dissipation (W) : 125 W;Input Capacitance (Ciss) : 1200 pF;Polarity : P-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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中文翻译

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数据手册

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RM13P200LD 数据手册

RM13P200LD

P-Channel Enhancement Mode Power MOSFET

ꢀ

General Features

ƽ V_DS=-200V,I_D=-13A

R_DS(ON)<420mΩ @ V_GS=-10V

ƽ Self-aligned Planar Technology

ƽ Excellent Switching Performance

ꢂ

Application

ƽ Power amplifier

ꢁ

Motor drive

Schematic diagram

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252 top view

Package Marking and Ordering Information

Device Package

Device Marking

Device

Reel Size

Tape width

Quantity

13P200

RM13P200LD

TO-252

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Symbol

Parameter

Values

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

-200

±20

-13

V_GS

I_D(T_C=25℃)

I_D(T_C=100℃)

I_DM

Continuous Drain Current

Pulsed Drain Current ^a

-7.2

-52

E_AS

Single Pulse Avalanche Energy ^b

Repetitive Avalanche Current ^a

750

-11

I_AR

E_AR

Repetitive Avalanche Energy ^a

P_D(T_C=25℃)

dV/dt

Maximum Power Dissipation

125

-5.0

-55~150

Peak Diode Recovery dV/dt

V/ns

℃

T_J, T_STG

R_θJA

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

℃/W

R_θCS

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

0.5

R_θJC

1.0

2023-08/113

REV:O

12 3 4 5 6

中文翻译

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