Datasheet > RM13N600T2

RM13N600T2

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	569K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 11.0 A;Rds-on (typ) (mOhms) : 380 mOhms;Total Gate Charge (nQ) typ : 21 nQ;Maximum Power Dissipation (W) : 78 W;Vgs(th) (typ) : 3.25 V;Input Capacitance (Ciss) : 901 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM13N600T2 数据手册

RM13N600T2

13Amps 600V N-Channel Power MOSFET

TO-220C

Features

13A, 600V, R_DSON=0.38Ω(MAX) @V_GS=10V

Ultra low gate charge(typical 21nC)

Low Reverse transfer capacitance (Crss typical 5.5pF)

Fast switching capability

100% avalanche energy specified

Improved dv/dt capability,high ruggedness

General Description

Package: TO-220C

This advanced technology has been especially tailored to minimize on-state resistance,

provide superior switching performance,and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high efficiency switch mode power

supply.

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Spec

600

Units

Drain Current -Continuous(Tc=25ć)

-Continuous(Tc=100ć)

Drain Current -Pulsed

I_D

I_DM

I_AR

Avalanche Current

1.6

V_GSS

E_AS

E_AR

P^D

Gate-Source Voltage

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Power Dissipation

(Note1)

211

0.32

Junction Temperature

+150

-55 to +150

Topr

Operating Temperature Range

T_stg

Storage Temperature

-55 to +150

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.6

Units

ć/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2016-11

REV:O29

12 3 4 5 6 7 8

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