Datasheet > RM138

RM138

更新时间： 2024-06-27 12:12:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	211K
描述
Vdss (V) : 50 V;Id @ 25C (A) : 0.22 A;Rds-on (typ) (mOhms) : 1200 mOhms;Total Gate Charge (nQ) typ : 1.7 nQ;Maximum Power Dissipation (W) : 0.35 W;Vgs(th) (typ) : 1.1 V;Input Capacitance (Ciss) : 27 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM138 数据手册

RM138

N-Channel Enhancement Mode Power MOSFET

General Features

V_DS= 50V,I_D= 0.22A

R_DS(ON)< 6Ω @ V

_GS=4.5V

=4.5V

R_DS(ON)< 3.5Ω @ V_GS=10V

Lead free product is acquired

Surface mount package

Schematic diagram

Application

Direct logic-level interface: TTL/CMOS

Drivers: relays, solenoids, lamps, hammers , display,

memories, transistors, etc.

Battery operated systems

Marking and pin assignment

Solid-state relays

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM138V

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM138

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed^{(Note 1)}

0.22

I_D

I_DM

0.88

Maximum Power Dissipation

0.35

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

350

Electrical Characteristics (T_A=25 unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

_GS=0V I_D=250μA

V_DS=50V,V_GS=0V

0.5

μA

2020-02/15

REV:E

12 3 4 5

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