Datasheet > RM135P40DF

RM135P40DF

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	1584K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 135 A;Rds-on (typ) (mOhms) : 3.1 mOhms;Total Gate Charge (nQ) typ : 195 nQ;Maximum Power Dissipation (W) : 131 W;Input Capacitance (Ciss) : 10733 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM135P40DF 数据手册

RM135P40DF

40V P-Channel Trench Power MOSFET

General Description

The RM135P40DF uses advanced trench technology to provide excellent

voltages as low as

R_DS(ON), low gate charge and operation with gate

-4.5V. This device is suitable for use as a wide variety of applications.

Features

I_D-135A

-40 V,

V_DS

●

R_{DS(ON)_TYP}

3.1 mΩ,

Q_G20 nC

Schematic Diagram

●

Low Gate Charge

● 100% UIS Tested, 100% DVDS Tested

● High Power and current handing capability

● Lead free product is acquired

Application

● DC/DC converters

● Load Switch

● Power Management

● Halogen-free

DFN5X6-8L top&bottom view

Package Marking and Ordering Information

Device/Ordering Code

Marking

Package

Reel Size

Tape width

Quantity

RM135P40DF

D5P40

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃ unless otherwise noted)

Parameter

Symbol

Limit

-40

Unit

Drain-Source Voltage (V_GS=0V)

V_DS

V_GS

Gate-Source Voltage (V_DS=0V)

±2 0

Drain Current-Continuous(T_C=25℃)

Drain Current-Continuous(T_C=100℃)

Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation(T_C=25℃)

Maximum Power Dissipation(T_C=100℃)

Avalanche energy ^{(Note 2)}

-135

-87

I_D

I_{DM (pluse)}

P_D

-548

131

℃

900

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J, T_STG

Thermal Characteristic

Parameter

Typ

Max

0.95

Unit

Symbol

Thermal Resistance, Junction-to-Case

℃/W

R_JC

2024-01/77

REV:O

12 3 4 5 6

中文翻译

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