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RM130N100HD PDF预览

RM130N100HD

更新时间: 2024-06-27 12:12:18
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 1000K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 4.5 mOhms;Total Gate Charge (nQ) typ : 51 nQ;Maximum Power Dissipation (W) : 192 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 3244 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-263(D2-PAK)

RM130N100HD 数据手册

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RM130N100HD  
N-Channel Super Trench Power MOSFET  
Description  
The RM130N100HD uses Super Trench technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely  
low combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
General Features  
Schematic diagram  
VDS =100V,ID =130A  
RDS(ON) 5.4  
GS=10V  
Excellent gate charge x RDS(on) product  
Very low on-resistance RDS(on)  
Pb-free lead plating  
100% UIS tested  
Application  
DC/DC Converter  
rectification  
Ideal for high-frequency switching and synchronous  
Halogen-free  
TO-263-2L top view  
100% UIS TESTED!  
100%  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
130N100  
RM130N100HD  
TO-263-2L  
-
-
-
Absolute Maximum Ratings (TC=25 unless otherwise noted)  
2022-12/59  
REV:A  

与RM130N100HD相关器件

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RM130N100T2 RECTRON

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Vdss (V) : 100 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 4.5 mOhms;Total Gate Charge (
RM130N150HD RECTRON

获取价格

Vdss (V) : 150 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 7.0 mOhms;Total Gate Charge (
RM130N200HD RECTRON

获取价格

Vdss (V) : 200 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 9.1 mOhms;Total Gate Charge (
RM130N200T2 RECTRON

获取价格

Vdss (V) : 200 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 9.4 mOhms;Total Gate Charge (
RM130N200T7 RECTRON

获取价格

Vdss (V) : 200 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 8.7 mOhms;Total Gate Charge (
RM130N30D3 RECTRON

获取价格

Vdss (V) : 30 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 2.4 mOhms;Total Gate Charge (n
RM130N60DF RECTRON

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Vdss (V) : 60 V;Id @ 25C (A) : 130 A;Rds-on (typ) (mOhms) : 2.2 mOhms;Total Gate Charge (n
RM-1318-H RRE

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Reduced-miniature Reed Switch
RM-1318-L RRE

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Reduced-miniature Reed Switch
RM-1318-M RRE

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Reduced-miniature Reed Switch