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RM12P30S8 PDF预览

RM12P30S8

更新时间: 2024-06-27 12:11:38
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
8页 263K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Total Gate Charge (nQ) typ : 24 nQ;Maximum Power Dissipation (W) : 3 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 1750 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM12P30S8 数据手册

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RM12P30S8  
P-Channel Enhancement Mode Power MOSFET  
Description  
The RM12P30S8 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 4.5V. This device is suitable for use as a  
load switch or in PWM applications.  
General Features  
VDS = -30V,ID = -12A  
Schematic diagram  
RDS(ON) < 25mΩ @ VGS=-4.5V  
RDS(ON) < 16mΩ @ VGS=-10V  
S
High Power and current handing capability  
Lead free product is acquired  
Surface mount package  
Marking and pin assignment  
Application  
PWM applications  
Load switch  
Power management  
Halogen-free  
SOP-8 top view  
Tape width  
P/N suffix V means AEC-Q101 qualified, e.g:RM12P30S8V  
Package Marking and Ordering Information  
Device Marking  
30P12  
Device  
Device Package  
Reel Size  
Quantity  
4000 units  
RM12P30S8  
SOP-8  
Ø330mm  
12mm  
S
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
20  
V
VGS  
ID  
IDM  
-12  
A
Drain Current-Pulsed (Note 1)  
-48  
3
A
Maximum Power Dissipation  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
41.67  
/W  
Electrical Characteristics (TA=25 unless otherwise noted)  
Parameter Symbol Condition  
Min Typ Max  
Unit  
Off Characteristics  
2018-07/15  
REV:C  

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