Datasheet > RM12N20D2

RM12N20D2

更新时间： 2024-07-02 20:14:30

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
10页	2161K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ) typ : 1.65 nQ;Maximum Power Dissipation (W) : 2 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 1069 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN2X2

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RM12N20D2 数据手册

RM12N20D2

N -Channel Enhancement Mode Power MOSFET

Description

The RM12N20D2 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge. This device is suitable for

use as a Battery protection or in other Switching application.

General Features

N-Channel

V_DS= 20V,I_D= 12A

R_DS(ON)

_GS=2.5V

_GS=4.5V

R_DS(ON)

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

12N20

RM12N20D2

DFN2X2-6L

4000units

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VDS

Drain-Source Voltage

12*

7.5

Drain Current - Continuous (TC 25°C)

- Continuous (TC 100°C)

Drain Current - Pulsed (Note 1)

Gate-Source Voltage

±12

Single Pulsed Avalanche Energy (Note 2)

^oC

P_D

T T

2.0

Power Dissipation (TC 25°C)

Operating and Storage Temperature Range

-55 to +150

j , stg

* Drain current limited by maximum junction temperature

2024-01/75

REV:A

12 3 4 5 6 7...10

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