Datasheet > RM12N100LD

RM12N100LD

更新时间： 2024-09-17 18:09:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	371K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 12.0 A;Total Gate Charge (nQ) typ : 26.2 nQ;Maximum Power Dissipation (W) : 34.7 W;Input Capacitance (Ciss) : 1535 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM12N100LD 数据手册

RM12N100LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM12N100LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS= 100V,I_D=12A

Schematic diagram

R_DS(ON)< 112mΩ @ V_GS=10V

R_DS(ON)< 120mΩ @ V_GS=4.5V

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM12N100LDV

Marking and pin assignment

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

TO-252 -2Ltop view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

12N100

RM12N100LD

TO-252-2L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Symbol

VDS

Parameter

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

7.7

I_D

I_D(100

)

Drain Current-Continuous(TC=100

Pulsed Drain Current

)

I_DM

Maximum Power Dissipation

Single pulse avalanche energy^{(Note 5)}

34.7

P_D

E_AS

256

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2019-01/83

REV:O

12 3 4 5 6

中文翻译

下载PDF

与RM12N100LD相关器件

型号	品牌	获取价格	描述	数据表
RM12N100S8	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 8 mOhms;Total Gate Charge (n
RM12N20D2	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 7 mOhms;Total Gate Charge (nQ
RM12N500T2	RECTRON	获取价格	Vdss (V) : 500 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 520 mOhms;Total Gate Charge
RM12N650HD	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM12N650IP	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 11.5 A;Rds-on (typ) (mOhms) : 360 mOhms;Total Gate Charge
RM12N650LD	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 11.5 A;Rds-on (typ) (mOhms) : 360 mOhms;Total Gate Charge
RM12N650T2	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM12N650TI	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM12P30AS8	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 10.5 mOhms;Total Gate Charge
RM12P30S8	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Total Gate Charge