Datasheet > RM1216

RM1216

更新时间： 2024-06-27 12:11:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	224K
描述
Vdss (V) : 12.0 V;Id @ 25C (A) : 16.0 A;Rds-on (typ) (mOhms) : 11.5 mOhms;Total Gate Charge (nQ) typ : 35 nQ;Maximum Power Dissipation (W) : 18 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 2700 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : DFN

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RM1216 数据手册

RM1216

P-ChannelEnhancement Mode Power MOSFET

Description

The RM1216 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages .This device is suitable for use as a load switching

application and a wide variety of other applications.

Schematic diagram

General Features

ƽ V_DS= -12V,I_D= -16A

R_DS(ON)< 22mȍ @ V_GS=-2.5V

R_DS(ON)< 18mȍ @ V_GS=-4.5V

ƽ Advanced trench MOSFET process technology

ƽ Ultra low on-resistance with low gate charge

Pin assignment

Application

ƽ PWM applications

ƽ Load switch

ƽ Battery charge in cellular handset

DFN2X2-6L bottom view

Package marking and ordering information

Device Marking

Device

Device Package

Reel Size

Tape Width

Quantity

1216

RM1216

DFN2X2-6L

Absolute maximum ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

Limit

-12

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±12

V^GS

-16

I_D

Drain Current -Pulsed (Note 1)

-65

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case (Note 2)

R_șJC

6.9

ć/W

2017-02

REV:O15

12 3 4 5 6

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