Datasheet > RM10_05

RM10_05

更新时间： 2024-11-05 09:47:03

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	44K
描述
SILICON RECTIFIER DIODES

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中文翻译

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数据手册

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RM10_05 数据手册

SILICON RECTIFIER DIODES

RM10 - RM10Z

PRV : 200 - 800 Volts

Io : 1.2 - 1.5 Amperes

FEATURES :

1.00 (25.4)

0.161 (4.10)

MIN.

* High current capability

* High surge current capability

* High reliability

0.154 (3.90)

0.284 (7.20)

0.268 (6.84)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

1.00 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

MECHANICAL DATA :

* Case : D2 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.465 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL RM10Z

RM10

RM10A

RM10B

UNIT

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 70 °C

Peak Forward Surge Current

1.5

1.2

IFSM

120

150

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.5 Amps.

0.91

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25 °C

IR(H)

Ta = 100 °C

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

°C/W

°C

RqJA

- 65 to + 175

Storage Temperature Range

TSTG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V_DC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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