Datasheet > RM1002

RM1002

更新时间： 2024-06-27 12:12:37

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	387K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 2.0 A;Rds-on (typ) (mOhms) : 112 mOhms;Total Gate Charge (nQ) typ

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RM1002 数据手册

RM1002

N-Channel Enhancement Mode Power MOSFET

Description

The 1002 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ꢀ^ꢁꢂꢂ

ꢃ^{ꢁꢂꢄꢅꢆꢇ}

ꢈ^ꢁ

(typ)

10V

Schematic diagram

mꢀ

ꢌꢍ

100V

ꢉꢊꢋ

- High density cell design for ultra low Rdson

- Fully characterized avalanche voltage and current

- Excellent package for good heat dissipation

1002

Application

-ꢀ Power switching application

SOT-23

-ꢀ Hard switched and high frequency circuits

-ꢀ Uninterruptible power supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM1002V

Marking:1002

Absolute Maximum Ratings (T_A=25?unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

100

VDS

Gate-Source Voltage

±20

VGS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_D

I_DM

P_D

Maximum Power Dissipation

1.1

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_ꢀJA

120

?/W

Electrical Characteristics (T_A=25?unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250ꢁA

100

110

V_DS=100V,V_GS=0V

ꢁA

2018-07/59

REV:A

12 3 4 5 6

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