Datasheet > RM0103

RM0103

更新时间： 2024-06-27 12:12:18

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1609K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 136 mOhms;Total Gate Charge (nQ) typ : 20 nQ;Maximum Power Dissipation (W) : 1.5 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 650 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM0103 数据手册

RM0103

N-Channel Enhancement Mode Power MOSFET

Description

The RM0103 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS= 100V,I_D= 3A

Schematic diagram

R_DS(ON)<160mΩ @ V_GS=10V (Typ:136mΩ)

R_DS(ON)<170mΩ @ V_GS=4.5V (Typ:140mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Marking and pin assignment

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Halogen-free

SOT-23 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

0103

RM0103

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

100

V^DS

Gate-Source Voltage

±20

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_D

I_DM

Maximum Power Dissipation

1.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

100

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=100V,V_GS=0V

100

μA

2019-02/15

REV:A

12 3 4 5 6 7

中文翻译

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