Datasheet > RM003N600ES2

RM003N600ES2

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	155K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 0.03 A;Rds-on (typ) (mOhms) : 280000 mOhms;Total Gate Charge (nQ) typ : 1.0 nQ;Maximum Power Dissipation (W) : 0.3 W;Input Capacitance (Ciss) : 7.0 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM003N600ES2 数据手册

RM003N600ES2

N-Channel Enhancement Mode Power MOSFET

Description

The RM003N600ES2 is an enhancement N-channel mode Power

FET, it uses advanced technology to provide customers ultra

high switching speed and ultra low gate charge.

SOT-23 top view

General Features

* R_DS(ON)ꢀ 600ꢁ @ V_GS= 4.5V, I_D=0.016A

R_DS(ON)ꢀ 500ꢁ @ V_GS=10V, I_D=0.016A

* Ultra Low Gate Charge (Typical 140nC)

* Ultra High Switching Speed

* Halogen-free

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

127ZG

RM003N600ES2

3000 units

SOT23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DSS

RATINGS

600

UNIT

Gate-Source Voltage

V_GSS

T_A=25°C

T_A=70°C

Pulsed (T_A=25°C)

0.03

0.02

0.09

kV/μs

Continuous

I_D

Drain Current

I_DM

dv/dt

P_D

T_J

T_STG

Peak Diode Recovery dv/dt

Power Dissipation (T_A=25°C)

Junction Temperature

0.3

-55 ~ +150

°C

Storage Temperature Range

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.ġ

Absolute maximum ratings are stress ratings only and functional device operation is not implied.ġ

2020-11/82

REV:O

12 3 4 5

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