1550 nm HIGH POWER PULSED LASER DIODES
Feature:
High peak output Power: 10 W, 20 W, 30 W
Eye safe wavelength - 1550 nm
InGaAsP/InP MQW Structure by MOCVD
Applications:
Eye safe laser rangefinders
Optical beacons
Maximum Rating:
Peak Reverse Voltage Vrm 2 V
Case Temperature:
Operating
Storage
-55°C to +65°C
-55°C to +85°C
5 seconds, +200°C
Soldering
Parameter
RLT-HPL1550-10 RLT-HPL1550-20 RLT-HPL1550-30 Units
Peak Forward Current (If), Max. 50
Peak Output Power(Po),
55
75
A
Min.
8
16
24
W
Typ.
10
20
30
W
Pulse Width (Tw), Max.
Duty Factor (DF), Max.
Threshold Current (Ith), Typ.
Peak Forward Voltage (Vf), Typ.
Center Wavelength (λo)
200
100
60
ns
0.05
0.025
5
0.025
5
%
5
A
10
20
30
V
1550+/-30
1550+/-30
20x40
1550+/-30
20x40
nm
Degree
Beam
Divergence
FWHM 20x40
(θ//×θ⊥)
Source Size (WxH)
Number of Laser Diode Element /
Assembly
370x1
1
370x100
2
370x200
3
µm
Package
9 mm TO Can
9 mm TO Can
9 mm TO Can
Roithner Lasertechnik, Vienna, Austria, Schoenbrunner Str. 7, +43 1 586 52 43-0, office@roithner-laser.com, www.roithner-laser. com