TH09/2479
IATF 0113686
TH97/2478
SGS TH07/1033
www.eicsemi.com
SILICON RECTIFIER DIODES
RL251 - RL257
D2A
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
1.00 (25.4)
MIN.
0.161 (4.1)
0.154 (3.9)
FEATURES :
* High current capability
* High surge current capability
* High reliability
0.284 (7.2)
0.268 (6.8)
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
1.00 (25.4)
MIN.
0.040 (1.02)
0.0385 (0.98)
MECHANICAL DATA :
* Case : D2A Molded plastic
Dimensions in inches and ( millimeters )
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
RL251 RL252 RL253 RL254 RL255 RL256 RL257
UNIT
SYMBOL
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
2.5
600
420
600
800 1000
560 700
800 1000
V
V
V
A
Maximum DC Blocking Voltage
100
IF(AV)
Maximum Average Forward Current at Ta = 75 °C
Peak Forward Surge Current
IFSM
150
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.5 A
Maximum DC Reverse Current Ta = 25 °C
VF
IR
1.1
5
V
μA
IR(H)
at rated DC Blocking Voltage
Ta = 100 °C
50
35
35
μA
CJ
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance
pF
RӨJA
TJ, TSTG
°C/W
°C
Operation Junction and Storage Temperature Range
- 65 to + 175
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 00 : June 20, 2007