5秒后页面跳转
RL107H-T PDF预览

RL107H-T

更新时间: 2024-11-16 19:38:19
品牌 Logo 应用领域
RECTRON 瞄准线二极管
页数 文件大小 规格书
2页 29K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC, A-405, 2 PIN

RL107H-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.64其他特性:HIGH RELIABILITY, LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.075 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RL107H-T 数据手册

 浏览型号RL107H-T的Datasheet PDF文件第2页 
RL101H  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
RL108H  
HIGH EFFICIENCY RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Low power loss, high efficiency  
* Low leakage  
* Low forward voltage  
* High current capability  
* High speed switching  
* High surge capability  
* High reliability  
A-405  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(
)
.025 0.6  
DIA.  
(
)
.021 0.5  
(
)
1.0 25.4  
MIN.  
* Weight: 0.33 gram  
(
)
.205 5.2  
(
)
.166 4.2  
(
)
.107 2.7  
DIA.  
(
)
.080 2.0  
(
)
1.0 25.4  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
UNITS  
Volts  
Volts  
Volts  
RL101H RL102H RL103H RL104H RL105H RL106H RL107H RL108H  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
RRM  
RMS  
50  
100  
200  
300  
400  
280  
400  
600  
800  
560  
800  
1000  
700  
35  
50  
70  
140  
200  
210  
300  
420  
600  
Maximum DC Blocking Voltage  
VDC  
100  
1000  
Maximum Average Forward Rectified Current  
I
O
1.0  
30  
Amps  
Amps  
at TA  
= 55oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note 2)  
C
J
15  
pF  
0 C  
12  
T
J
, TSTG  
-55 to + 150  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
RL101H RL102H RL103H RL104H RL105H RL106H RL107H RL108H UNITS  
Maximum Instantaneous Forward Voltage at 1.0A DC  
VF  
Volts  
1.0  
1.3  
1.7  
Maximum DC Reverse Current  
5.0  
uAmps  
at Rated DC Blocking Voltage TA  
= 25oC  
I
R
Maximum Full Load Reverse Current  
100  
uAmps  
Average, Full Cycle .375” (9.5mm) lead length at TL  
= 55oC  
Maximum Reverse Recovery Time (Note 1)  
trr  
50  
75  
nSec  
NOTES : 1. Test Conditions: I  
F
= 0.5A, IR = -1.0A, IRR = -0.25A  
2003-7  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts  

与RL107H-T相关器件

型号 品牌 获取价格 描述 数据表
RL107N01 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107-N-0-1-AP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, A-405, 2 P
RL107N02 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107N03 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107N04 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107N11 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107-N-1-1-AP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, A-405, 2 P
RL107N12 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107N13 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon
RL107N14 DIODES

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon