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RJU003N03T106 PDF预览

RJU003N03T106

更新时间: 2024-09-21 12:02:51
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
5页 223K
描述
2.5V Drive Nch MOSFET

RJU003N03T106 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.92
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):0.3 A最大漏极电流 (ID):0.3 A
最大漏源导通电阻:1.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN SILVER COPPER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RJU003N03T106 数据手册

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2.5V Drive Nch MOSFET  
RJU003N03  
zStructure  
zDimensions (Unit : mm)  
Silicon N-channel MOSFET  
UMT3  
2.0  
0.9  
0.7  
0.2  
0.3  
zFeatures  
( )  
3
1) Low On-resistance.  
2) Low voltage drive (2.5V drive).  
( )  
2
( )  
1
0.650.65  
1.3  
0.15  
(1) Source  
(2) Gate  
Each lead has same dimensions  
zApplications  
Switching  
Abbreviated symbol : LP  
(3) Drain  
zPackaging specifications and hFE  
zInner circuit  
(3)  
Package  
Taping  
T106  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RJU003N03  
(2)  
2  
(1) Source  
(2) Gate  
(3) Drain  
1  
(1)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Symbol  
Limits  
30  
Unit  
V
VDSS  
VGSS  
ID  
Gate-source voltage  
12  
V
Continuous  
300  
mA  
A
Drain current  
1  
2  
Pulsed  
IDP  
1.2  
Total power dissipation  
Channel temperature  
PD  
200  
mW  
°C  
°C  
Tch  
Tstg  
150  
Range of storage temperature  
1 Pw10µs, Duty cycle1%  
2 Each terminal mounted on a recommended land  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Limits  
625  
Unit  
Channel to ambient  
Each terminal mounted on a recommended land  
Rth(ch-a)  
°C/W  
www.rohm.com  
c
2009.03 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
1/4  

RJU003N03T106 替代型号

型号 品牌 替代类型 描述 数据表
RHU003N03T106 ROHM

功能相似

Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

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