Datasheet > RI40N1200T7

RI40N1200T7

更新时间： 2024-09-09 18:09:07

品牌	Logo	应用领域
RECTRON		栅双极性晶体管
页数	文件大小	规格书
7页	925K
描述
Vdss (V) : 1200 V;Id @ 25C (A) : 65 A;Total Gate Charge (nQ) typ : 120 nQ;Maximum Power Dissipation (W) : 430 W;Vgs(th) (typ) : 6.0 V;Input Capacitance (Ciss) : 2500 pF;Mounting Style : Through Hole;Package / Case : TO-247;Type : IGBT

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RI40N1200T7 数据手册

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RI40N1200T7

IGBT

Feature

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1200V,40A

V_{CE(sat)(typ.)}=1.9V@V_GE=15V,I_C=40A

IGBT chip in trench FS-technology

Low switching losses

V_CE(sat)with positive temperature coefficient

Fast switching and short tail current

Free wheeling diodes with fast and soft reverse recovery

Application

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High frequency switching application

Medical applications

Motion/servo control

UPS systems

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Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

i40N120

RI40N1200T7

TO-247

600

Absolute Maximum Ratings

Parameter

Collector-emitter Voltage˄T_J=25ć˅

DC collector current˄T_C=25ć˅

DC collector current ˄T_C=100ć˅

Pulsed collector current

Symbol

V_CES

Value

1200

Unit

I_C

I_CM

V_GES

T_STG

T_J

160

Gate-emitter voltage

f20

-55ü175

-40ü175

1200

Storage Temperature Range

Operating Junction Temperature Range

Repetitive Reverse Voltage˄T_J=25ć˅

V_RRM

Diode Continuous Forward Current˄T_J=100ć˅

Diode pulsed current, tp limited by T_Jmax

Short Circuit Withstand Time

I_F

I_FM

t_sc

P_{D_IGBT}

160

Power dissipation IGBT Max

430

Power dissipation FWD Max

P_{D_FWD}

125

2023-05/59

REV:O

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12 3 4 5 6 7

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