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RHCV4

更新时间： 2024-11-12 06:49:19

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
1页	26K
描述
Rectifier Diode, 1 Element, 0.6A, Silicon

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数据手册

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RHCV4 数据手册

Fast-Recovery Rectifier Diodes

Electrical Characteristics (Ta =25°C)

Absolute Maximum Ratings

Others

Mass

Parameter

I_FSM

(A)

50Hz

Half-cycle Sinewave

Single Shot

(°C)

Tstg

(°C)

V_F

(V)

I_R

(µA)

I_R

(µA)

t_rr

(µs)

(H)

➀

➁

Rth (j-

)

(µs)

V_RM

(V)

I_{F (AV)}

(A)

Fig.

Type No.

V_R=VRM

max

V_R=VRM

150°C max

I_F

(A)

I_F

(mA)

I_RP

I_F

(mA)

/I_RP

max

2.0

(°C/ W)

(g)

0.4

2000

200

400

600

200

400

600

800

1000

0.2

0.6

0.2

300

4.0

10/10 1.3

10/20

RC 2

EH 1Z

EH 1

0.3

0.4

1.35 0.6

200

10/10 1.3

10/20

EH 1A

RH 1Z

RH 1

–40 to +150

0.6

1.3

0.6

4.0

10/10 1.3

RH 1A

RH 1B

RH 1C

RC 2 series

V_F—I_FCharacteristics (Typical)

I_FMSRating

Ta —I_F(AV)Derating

500

0.25

20ms

0.2

100

0.15

0.1

0.05

100

125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Ambient Temperature Ta (°C)

Forward Voltage V_F(V)

Overcurrent Cycles

EH 1 series

V_F—I_FCharacteristics (Typical)

I_FMSRating

Ta —I_F(AV)Derating

1.0

20ms

0.8

0.6

0.4

0.2

0.1

100ºC

60ºC

25ºC

0.01

0.001

100

125 150

0.2

0.5

1.0

1.5

Ambient Temperature Ta (°C)

Forward Voltage V_F(V)

Overcurrent Cycles

RH 1 series

V_F—I_FCharacteristics (Typical)

I_FMSRating

Ta —I_F(AV)Derating

5.0

1.0

20ms

0.8

0.6

0.4

0.2

1.0

0.5

0.1

0.05

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

125 150

Ambient Temperature Ta (°C)

Forward Voltage V_F(V)

Overcurrent Cycles

External Dimensions

Fig.

(Unit: mm)

0.78^±0.05

Flammability:

UL94V-0 or Equivalent

Cathode Mark

2.7 ^±0.2

4.0^±0.2

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